| PART |
Description |
Maker |
| SPP80N08S2L-07 SPB80N08S2L-07 |
Low Voltage MOSFETs - TO220/263; 80 A; 75V; LL; 7,1 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| PPN0500B 542AB0500 915AB0500MBP |
HEATSINK TO220/218 5.0C/W
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
HEATSINK TO220/218 5.8C/W 散热片TO220/218 5.8摄氏
|
KEMET Corporation
|
| IPI05N03LA IPP05N03LA IPB05N03LA |
OptiMOS®2 - Power packages
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 25V, TO220, RDSon = 5.2mOhm, 80A, LL
OptiMOS 2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
Infineon Technologies A...
|
| SPB100N06S2L-05 SPP100N06S2L-05 |
Low Voltage MOSFETs - TO220/263; 100 A; 55V; LL; 4,7 mOhm
OptiMOS Power-Transistor
Silver Mica Capacitor; Capacitance:15pF; Capacitance Tolerance: /- 5%; Series:CD6; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:4.4mm; Leaded Process Compatible:No RoHS Compliant: No
|
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| BUZ32 BUZ32SMD |
Low Voltage MOSFETs - Power MOSFET, 200V, DPAK, RDSon=0.4 Ohm, 9.5A, NL
Low Voltage MOSFETs - Power MOSFET, 200V, TO-220, RDSon=0.4 Ohm, 9.5A, NL
SIPMOS Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| HC55120CB HC55130IB |
Voltage Regulator IC; Output Current:2A; Output Voltage:5V; Package/Case:3-TO3P; Output Voltage Max:5.1V; Output Voltage Min:4.9V
IC-VLTG REG 6V TO220 ISO
|
Intersil Corporation
|
| KMA3D6N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMA3D0N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMB2D0N60SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03 |
80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm
|
INFINEON[Infineon Technologies AG]
|
